2n4416/2n4416a/SST4416 vishay siliconix document number: 70242 s-04028?rev. f, 04-jun-01 www.vishay.com 7-1 n-channel jfets
part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) 2n4416 ? 6 ?30 4.5 5 2n4416a ?2.5 to ?6 ?35 4.5 5 SST4416 ? 6 ?30 4.5 5
excellent high-frequency gain: 2n4416/a, gps 13 db (typ) @ 400 mhz very low noise: 3 db (typ) @ 400 mhz very low distortion high ac/dc switch off-isolation wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches the 2n4416/2n4416a/SST4416 n-channel jfets are designed to provide high-performance amplification at high frequencies. the to-206af (to-72) hermetically-sealed package is available with full military processing (see military information.) the to-236 (sot-23) package provides a low-cost option and is available with tape-and-reel options (see packaging information). for similar products in the to-226aa (to-92) package, see the j304/305 data sheet. to-206af (to-72) s c d g top view 2n4416 2n4416a 1 23 4 d s g to-236 (sot-23) 2 3 1 top view SST4416 (h1)* *marking code for to-236 for applications information see an104.
2n4416/2n4416a/SST4416 vishay siliconix www.vishay.com 7-2 document number: 70242 s-04028 ? rev. f, 04-jun-01
gate-drain, gate-source voltage : (2n/SST4416) ? 30 v . . . . . . . . . . . . . . . . . . . . . (2n4416a) ? 35 v . . . . . . . . . . . . . . . . . . . . . . . . . gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature 300 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature : (2n prefix) ? 65 to 200 c . . . . . . . . . . . . . . . . . . (sst prefix) ? 65 to 150 c . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : (2n prefix) a 300 mw . . . . . . . . . . . . . . . . . . . . . . (sst prefix) b 350 mw . . . . . . . . . . . . . . . . . . . . notes a. derate 2.4 mw/ c above 25 c b. derate 2.8 mw/ c above 25 c
limits 2n4416 2n4416a SST4416 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 36 ? 30 ? 35 ? 30 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 1 na ? 3 ? 6 ? 2.5 ? 6 ? 6 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 10 5 15 5 15 5 15 ma v gs = ? 20 v, v ds = 0 v (2n) ? 2 ? 100 ? 100 pa t a = 150 c ? 4 ? 100 ? 100 gate reverse current i gss v gs = ? 15 v, v ds = 0 v (sst) ? 0.002 ? 1 na t a = 125 c ? 0.6 gate operating current i g v dg = 10 v, i d = 1 ma ? 20 drain cutoff current c i d(off) v ds = 10 v, v gs = ? 6 v 2 pa drain-source on-resistance c r ds(on) v gs = 0 v, i d = 1 ma 150 gate-source forward voltage c v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance b g fs v ds = 15 v, v gs = 0 v 6 4.5 7.5 4.5 7.5 4.5 7.5 ms common-source output conductance b g os v ds = 15 v, v gs = 0 v f = 1 khz 15 50 50 50 s common-source input capacitance c iss 2.2 4 4 common-source reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v f = 1 mhz 0.7 0.8 0.8 pf common-source output capacitance c oss 1 2 2 equivalent input noise voltage c e n v ds = 10 v, v gs = 0 v f = 1 khz 6 nv ? hz
2n4416/2n4416a/SST4416 vishay siliconix document number: 70242 s-04028 ? rev. f, 04-jun-01 www.vishay.com 7-3
limits 100 mhz 400 mhz parameter symbol test conditions min max min max unit common source input conductance g iss 100 1,000 common source input susceptance b iss 2,500 10,000 common source output conductance g oss v ds = 15 v, v gs = 0 v 75 100 s common source output susceptance b oss ds gs 1,000 4,000 common source forward transconductance g fs 4,000 common-source power gain g ps v ds = 15 v, i d = 5 ma 18 10 noise figure nf r g = 1 k 2 4 db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nh b. pulse test: pw 300 s duty cycle 3%. c. this parameter not registered with jedec. ! on-resistance and output conductance vs. gate-source cutoff voltage r ds g os r ds @ i d = 1 ma, v gs = 0 v g os @ vds = 10 v, v gs = 0 v f = 1 khz drain current and transconductance vs. gate-source cutoff voltage i dss g fs i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz v gs(off) ? gate-source cutoff voltage (v) 10 8 0 6 4 2 20 0 16 12 8 4 0 ? 10 ? 2 ? 4 ? 6 ? 8 100 80 0 60 40 20 500 0 400 300 200 100 0 ? 10 ? 2 ? 4 ? 6 ? 8 v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) output characteristics output characteristics 10 0 8 6 4 2 010 24 68 15 0 12 9 6 3 010 24 68 v gs(off) = ? 2 v v gs(off) = ? 3 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.2 v ? 1.0 v v gs = 0 v ? 0.6 v ? 0.9 v ? 1.2 v ? 1.5 v ? 1.8 v v gs = 0 v ? 0.3 v v gs(off) ? gate-source cutoff voltage (v) ? 1.4 v gos ? output conductance ( s) i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) i d ? drain current (ma) i d ? drain current (ma)
2n4416/2n4416a/SST4416 vishay siliconix www.vishay.com 7-4 document number: 70242 s-04028 ? rev. f, 04-jun-01 ! output characteristics 5 0 1.0 4 3 2 1 0 v ds ? drain-source voltage (v) 0.2 0.4 0.6 0.8 v gs = 0 v v gs(off) = ? 2 v output characteristics 5 0 1.0 4 3 2 1 0 v ds ? drain-source voltage (v) 0.2 0.4 0.6 0.8 v gs = 0 v v gs(off) = ? 3 v ? 0.4 v ? 0.2 v ? 0.6 v ? 0.8 v ? 1.0 v ? 1.2 v ? 1.4 v ? 1.2 v ? 1.5 v ? 1.8 v ? 2.1 v ? 0.3 v ? 0.9 v ? 0.6 v 10 v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) transfer characteristics v gs(off) = ? 2 v t a = ? 55 c 125 c transfer characteristics t a = ? 55 c 125 c v gs(off) = ? 3 v v gs ? gate-source voltage (v) transconductance vs. gate-source voltage v gs(off) = ? 2 v t a = ? 55 c 125 c v gs ? gate-source voltage (v) transconductance vs. gate-source voltgage t a = ? 55 c 125 c v gs(off) = ? 3 v 0 8 6 4 2 0 ? 2 ? 0.4 ? 0.8 ? 1.2 ? 1.6 10 0 8 6 4 2 0 ? 3 ? 0.6 ? 1.2 ? 1.8 ? 2.4 10 0 8 6 4 2 0 ? 2 ? 0.4 ? 0.8 ? 1.2 ? 1.6 10 0 8 6 4 2 0 ? 3 ? 0.6 ? 1.2 ? 1.8 ? 2.4 v ds = 10 v v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v f = 1 khz 25 c 25 c 25 c 25 c g fs ? forward transconductance (ms) g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
2n4416/2n4416a/SST4416 vishay siliconix document number: 70242 s-04028 ? rev. f, 04-jun-01 www.vishay.com 7-5 ! i d ? drain current (ma) i d ? drain current (ma) on-resistance vs. drain current circuit voltage gain vs. drain current 0.1 1 10 t a = 25 c ? 3 v v gs(off) = ? 2 v 10 0.1 a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d v gs(off) = ? 2 v ? 3 v 300 0 240 180 120 60 100 0 80 60 40 20 1 common-source input capacitance vs. gate-source voltage common-source reverse feedback capacitance vs. gate-source voltage f = 1 mhz v ds = 0 v 10 v v ds = 0 v 10 v v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) f = 1 mhz input admittance forward admittance 100 10 1 0.1 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source (ms) 100 10 1 0.1 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source (ms) f ? frequency (mhz) f ? frequency (mhz) 5 0 4 3 2 1 0 ? 20 ? 4 ? 8 ? 12 ? 16 3 0 2.4 1.8 1.2 0.6 0 ? 20 ? 4 ? 8 ? 12 ? 16 200 500 200 500 b is g is ? b fs g fs r ds(on) ? drain-source on-resistance ( ? ) a v ? voltage gain c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
2n4416/2n4416a/SST4416 vishay siliconix www.vishay.com 7-6 document number: 70242 s-04028 ? rev. f, 04-jun-01 ! reverse admittance output admittance 10 1 0.1 0.01 100 1000 (ms) t a = 25 c v ds = 15 v v gs = 0 v common source ? b rs ? g rs 10 1 0.1 0.01 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source b os g os (ms) f ? frequency (mhz) f ? frequency (mhz) 200 500 200 500 10 100 1 k 100 k 10 k 20 0 16 12 8 4 equivalent input noise voltage vs. frequency output conductance vs. drain current v ds = 10 v i d = 5 ma v gs = 0 v 0.1 1 10 t a = ? 55 c 125 c v gs(off) = ? 3 v i d ? drain current (ma) f ? frequency (hz) 20 0 16 12 8 4 v ds = 10 v f = 1 khz v dg ? drain-gate voltage (v) i d ? drain current (ma) gate leakage current 0.1 ma i gss @ 25 c i gss @ 125 c common-source forward transconductance vs. drain current 0.1 1 10 10 8 0 v gs(off) = ? 3 v t a = ? 55 c 125 c 012 8 41620 6 4 2 v ds = 10 v f = 1 khz 5 ma 1 ma 0.1 ma t a = 25 c t a = 125 c i g @ i d = 5 ma 1 ma 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 100 na 25 c 25 c e n ? noise voltage nv / hz g os ? output conductance ( s) g fs ? forward transconductance (ms) i g ? gate leakage
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